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§231.118. Semiconductors critical to national security.

15 C.F.R. § 231.118

Semiconductors critical to national security means:
(a)
Semiconductors utilizing nanomaterials, including 1D and 2D carbon allotropes such as graphene and carbon nanotubes;
(b)
Compound and wide- and ultra-wide bandgap semiconductors;
(c)
Radiation-hardened by process (RHBP) semiconductors;
(d)
Fully depleted silicon on insulator (FD-SOI) semiconductors, other than with regard to semiconductor packaging operations with respect to such semiconductors of a 28-nonometerer generation or older;
(e)
Silicon photonic semiconductors;
(f)
Semiconductors designed for quantum information systems;
(g)
Semiconductors designed for operation in cryogenic environments (at or below 77 Kelvin); and
(h)
Any other semiconductors that the Secretary, in consultation with the Secretary of Defense and the Director of National Intelligence, determines is critical to national security and issues a public notice of that determination.
Notes, amendments, and revision history

Authority

Authority: 15 U.S.C. 4651, et seq.

Source

Source: 88 FR 61614, Sept. 25, 2023, unless otherwise noted.